Semiconductor device with contact pad and method of making

ABSTRACT

A semiconductor structure includes a conductive structure over a first passivation layer; and a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure, wherein a top surface of the first oxide film is planar. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure, wherein a top surface of the second oxide film is planar. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure, wherein a top surface of the third oxide film is curved.

RELATED APPLICATION

This application is a continuation from U.S. application Ser. No.16/748,587, filed Jan. 21, 2020, which is a divisional application fromU.S. patent application Ser. No. 15/701,654, filed Sep. 12, 2017, nowU.S. Pat. No. 10,553,479, issued Feb. 4, 2020, which claims the benefitof U.S. Provisional Application No. 62/459,936, filed Feb. 16, 2017, theentirety of which are incorporated herein by reference.

BACKGROUND

After completion of the fabrication process of an integrated circuit(IC) device, contact pads are formed over a topmost inter metaldielectric (IMD) and for use in wire bonding or flip-chip bonding. In aflip-chip scale packaging process, a conductive bump is formed toestablish an electrical connection between a contact pad and a substrateor a lead frame of the package. In order to fulfill market demandstoward increased functionality and decreased manufacturing cost, awafer-level chip scale packaging (WLCSP) process is introduced byforming a post passivation interconnect (PPI) and/or an under bumpmetallurgy (UBM) structure over the contact pad. The wafer is sawed intodies to be bonded to a printed circuit board (PCB), in some instances.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of a semiconductor device in accordancewith one or more embodiments.

FIG. 2 is a flow chart of a method of fabricating a semiconductor devicein accordance with one or more embodiments.

FIGS. 3A-3D are cross-sectional views of a semiconductor device atvarious stages of manufacturing in accordance with one or moreembodiments.

FIG. 4 is a cross-sectional view of a semiconductor device in accordancewith one or more embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures.

An integrated circuit (IC) structure includes semiconductor dies havingactive components, such as transistors and diodes, and passivecomponents, such as capacitors and resistors, which are initiallyisolated from each other and later electrically coupled to each otherand/or to another IC structure through interconnect structures to createfunctional circuits. A first passivation layer is formed over theinterconnect structures to protect the interconnect structures frombeing damaged. A plurality of contact pads are formed over the firstpassivation layer and are covered by a second passivation layer toprotect the contact pads. One or more stress buffer layers for reducinga stress mismatch introduced during a packaging process are depositedover the second passivation layer.

In some embodiments, the second passivation layer includes at least fourinsulating films sequentially formed on a top surface of the contactpad. A second insulating film is discontinuously arranged between afirst insulating film and a third insulating film. In some embodimentswhere the contact pad has a trapezoid profile and a top portion has asmaller width than a bottom portion, the second passivation layer isalong the trapezoid profile of the contact pad. In such a way, a spacebetween adjacent contact pads is free of voids because the secondpassivation layer is free of an overhang extending outwardly from thetop portion of the contact pad. As a result, the first passivation layeris protected from an acid solution used during a subsequentmanufacturing process. In comparison with other approaches, the secondpassivation layer helps to reduce defects such as stress cracking and/orpeeling at a bottom portion of the contact pad, thereby improving adevice reliability and production yield.

FIG. 1 is a cross-sectional view of a semiconductor device 100 inaccordance with one or more embodiments. Semiconductor device 100includes an inter-metal dielectric (IMD) 110, a first passivation layer120, at least one contact pad 130, and a second passivation layer 140.IMD 110 is a topmost layer of multiple IMD layers that are stacked overa substrate. IMD 110 is configured to physically and electricallyisolate one interconnect structure, such as a conductive line or a viaplug, from another interconnect structure. In some embodiments, IMD 110includes silicon oxide (SiO_(x); x is equal to or smaller than 2). Insome embodiments, IMD 110 includes a low dielectric constant κ (low-κ)dielectric (as compared to silicon dioxide), such as phophosilicateglass (PSG), borosilicate glass (BSG), borophosphosilicate glass (BPSG),fluorinated silicate glass (FSG), silicon oxycarbide (SiO_(x)C_(y)),tetraethyl orthosilicate (TEOS), a combination thereof or anothersuitable material. A topmost conductive line 112 is in IMD 110. In someembodiments, conductive line 112 is connected to an active device or apart of a passive device. In some embodiments, conductive line 112 is apart of a dummy pattern or a guard seal ring structure. In someembodiments, conductive line 112 includes copper, aluminum, tungsten,titanium, a combination thereof or another suitable material.

First passivation layer 120 is over IMD 110 and is below contact pads130 and second passivation layer 140. That is, a first portion of firstpassivation layer 120 is in direct contact with contact pads 130 and asecond portion of first passivation layer 120 is in direct contact withsecond passivation layer 140. In some embodiments, a thickness T10between a top surface of the first portion and a top surface of thesecond portion is in a range from about 100 nanometers (nm) to about 300nm. A greater difference increases a difficulty of filling a spacebetween adjacent contact pads 130, in some instances. In someembodiments, first passivation layer 120 is configured to protect theinterconnect structures from damage and contamination. In someembodiments, first passivation layer 120 further provides protection tohelp prevent or decrease moisture, mechanical and radiation damage tothe underlying electrical devices. In some embodiments, a thickness offirst passivation layer 120 ranges from about 500 nm to about 1200 nm. Athicker first passivation layer 120 increases manufacturing cost withoutsignificant benefit, in some instances. A thinner first passivationlayer 120 provides insufficient protection to the underlying structures,in some instances. In some embodiments, first passivation layer 120includes a dielectric material, such as silicon oxide, undoped silicateglass (USG), silicon nitride, silicon oxynitride, polymer, a combinationthereof or another suitable material. In some embodiments, firstpassivation layer 120 includes a single material. In some embodiments,first passivation layer 120 includes a plurality of materials.

Contact pad 130, also referred to as a bonding pad or an input/output(I/O) pad, is over first passivation layer 120. In some embodiments, avia plug 132 is in first passivation layer 120 and is configured toelectrically connect contact pad 130 and conductive line 112. In someembodiments, via plug 132 is a portion of contact pad 130. That is, abottom portion of contact pad 130 extends through first passivationlayer 120 and an upper portion of contact pad 130 extends over firstpassivation layer 120. In some embodiments, contact pad 130 includesaluminum, copper, aluminum alloys, copper alloys, a combination thereofor another suitable conductive material. In some embodiments, contactpad 130 includes a same material as conductive line 112. In someembodiments, contact pad 130 includes a different material fromconductive line 112.

Second passivation layer 140 is over contact pads 130 and firstpassivation layer 120 so as to protect contact pads 130 from damage. Insome embodiments, second passivation layer 140 is configured to absorbor release thermal stress and/or mechanical stress caused during dicingand packaging processes. Second passivation layer 140 includes a firstinsulating film 142, a second insulating film 144, a third insulatingfilm 146 and a fourth insulating film 148. In various embodiments, firstinsulating film 142 is configured to protect contact pad 130 from beingdamaged by a high-density plasma. In various embodiments, secondinsulating film 144 is configured to provide a physical isolation offirst insulating film 142, preventing atoms from diffusing into contactpad 130. In various embodiments, third insulating film 146 is configuredto form a trapezoid profile of second passivation layer 140, therebyhelping to prevent a formation of overhangs and/or voids.

First insulating film 142 includes a first portion 142 a in directcontact with first passivation layer 120, a second portion 142 b indirect contact with a top surface of contact pad 130, and a thirdportion 142 c in direct contact with sidewalls of contact pad 130.Second insulating film 144 includes a first portion 144 a over and incontact with first portion 142 a, and a second portion 144 b over and incontact with second portion 144 b. In some embodiments, an entirety ofsecond insulating film 144 is substantially parallel with the topsurface of first passivation layer 120. Third insulating film 146 isover first portion 144 a, second portion 142 b, and third portion 142 c.In other words, except for sidewall portions of contact pad 130, secondinsulating film 144 is between first insulating film 142 and thirdinsulating film 146. At the sidewall portions of contact pad 130, thirdinsulating film 146 is in direct contact with first insulating film 142.Fourth insulating film 148 is continuously in direct contact with thirdinsulating film 146 and is below a relatively soft film 150 functioningas a stress buffer. In some embodiments, relatively soft film includesat least one of polyimide (PI), benzocyclobutene (BCB), polybenzoxazole(PBO), epoxy, silicone, acrylates, nano-filled phenolic resin or othersuitable material. In some embodiments, fourth insulating film 148 has abottom-up ratio, i.e., a ratio of thickness T44 to thickness T42,ranging from about 0.75 to about 1.1. In some embodiments, eachinsulating film of second passivation layer 140 includes silicon oxide,silicon nitride, silicon oxynitride or another suitable material. Insome embodiments, at least one insulating film of second passivationlayer 140 includes a same material as first passivation layer 120. Insome embodiments where adjacent insulating films 142-146 include a samematerial, due to different film densities, an interface exists toseparate one insulating film from another with respect to across-sectional view. In some embodiments, the interface is formed bydifferent deposition processes. In some embodiments, each insulatingfilm of second passivation layer 140 includes a different material fromfirst passivation layer 120. In at least one embodiment, first, secondand third insulating films 142-146 include silicon oxide and fourthinsulating film 148 includes silicon nitride. In some embodiments, anangle θ between a sidewall portion and a bottom portion of fourthinsulating film is greater than 95 degrees. A smaller angle increases adifficulty of a subsequent process, for example, a filling of apolymeric layer, in some instances.

In some embodiments where first, second and third insulating films142-146 include silicon oxide, a refractive index of second insulatingfilm 144 is from about 8% to about 15% greater than that of firstinsulating film 142. In some embodiments, the refractive index of secondinsulating film 144 is greater than that of third insulating film 146.In some embodiments, the refractive index of second insulating film 144ranges from about 1.6 to about 1.7. A smaller refractive index increasesa breakdown voltage variation resulting from a subsequent plasmaprocessing, in some instances. In some embodiments, the refractive indexof second insulating film 144 ranges from about 1.7 to about 1.8. Insome embodiments where first insulating film 142 and third insulatingfilm 146 include silicon oxide, the refractive index of first insulatingfilm 142 and/or third insulating film 146 independently ranges fromabout 1.4 to about 1.5. A greater or a smaller refractive index changesa profile of semiconductor device 100, in some instances. In someembodiments, first insulating film 142 has a same refractive index asthird insulating film 146. In some embodiments, first insulating film142 has a different refractive index from third insulating film 146. Forexample, in some embodiments, the refractive index of first insulatingfilm 142 is smaller than that of third insulating film 146.

In some embodiments where first, second and third insulating films142-146 include silicon oxide, in order to have a relatively highrefractive index comparing to first and third insulating films 142 and146, second insulating film 144 has a smaller oxygen-to-silicon ratiothan that of first insulating film 142 or third insulating film 146. Insome embodiments, second insulating film 144 has a greater dielectricconstant than that of first insulating film 142 or third insulating film146. Because silicon atoms constitute larger vacant space than oxygenatoms, a dielectric constant is inversely proportional tooxygen-to-silicon ratio. In some embodiments where second and thirdinsulating films 144-146 include silicon oxide, at least one of secondinsulating film 144 or third insulating film 146 has a Fourier transforminfrared spectroscopy (FTIR) absorption band ranging from about 2500 nmto about 2900 nm. In some embodiments, first, second and thirdinsulating films 142-146 have a FTIR absorption band independentlyranging from about 8000 nm to about 13333 nm.

Second passivation layer 140 has a thickness T20 measured from the topsurface of first passivation layer 120. In some embodiments, a ratio ofthickness T20 to a thickness T30 of contact pad 130 is in a range fromabout 0.7 to about 1.3. A greater ratio increases a difficulty offilling the space between adjacent contact pads 130, in some instances.A smaller ratio provides insufficient protection to contact pads 130, insome instances. A maximum distance T42 between sidewalls of secondpassivation layer 140 is measured from a top surface of fourthinsulating film 148, and a W44 of a planar portion of second passivationlayer 140 is measured at a top portion of fourth insulating film 148. Insome embodiments, a ratio of width W42 to width W44 is in a range fromabout 3:1 to about 4:1. A smaller ratio increases an occurrence ofoverhangs at an upper corner of contact pad 130, in some instances.

FIG. 2 is a flow chart of a method 200 of fabricating a semiconductordevice in accordance with one or more embodiments. One of ordinary skillin the art would understand that additional operations are able to beperformed before, during, and/or after method 200 depicted in FIG. 2.Additional details of the fabrication process are provided below withrespect to FIGS. 3A-3D and 4, in accordance with some embodiments.

Method 200 includes operation 210 in which a conductive structure, e.g.,contact pad 130 in FIG. 1, is formed over a first passivation layer,e.g., first passivation layer 120 in FIG. 1. In some embodiments, thefirst passivation layer is deposited over a topmost IMD and a topmostconductive line, which are stacked over a substrate to form aninterconnect structure. In some embodiments, a thickness of the firstpassivation layer ranges from about 500 nm to about 1200 nm. A thickerfirst passivation layer increases manufacturing cost without significantbenefit, in some instances. A thinner first passivation layer providesinsufficient protection to the underlying interconnect structure, insome instances. In some embodiments, a liner is formed prior to thedeposition of the first passivation layer and serves as an etch stoplayer in order to provide an etch selectivity.

A portion of the first passivation layer is removed using a lithographyprocess and an etch process to form at least one opening exposing thetopmost conductive line. The etch process includes a wet etching using achemical etchant, or a dry etching by exposing the first passivationlayer to a bombardment of ions. After the opening is formed in the firstpassivation layer, a conductive material, such as aluminum, aluminumalloy, copper, or copper alloy, is deposited over the first passivationlayer, filling the opening to electrically connect to the topmostconductive line. The deposition of the conductive material includessputtering, physical vapor deposition (PVD), chemical vapor deposition(CVD), atomic layer deposition (ALD), electrolytic plating, electrolessplating or another suitable process. In some embodiments, the conductivematerial is deposited to a thickness ranging from about 1000 nm to about3000 nm. A greater thickness increases manufacturing cost without asignificant improvement for electrical performance, in some instances. Asmaller thickness provides insufficient support for a stress causedduring a wiring process, in some instances. In some embodiments wherethe thickness of the conductive material is smaller than a depth of theopening, a center portion of the conductive structure protrudes towardthe first passivation layer, resulting in a recess at the top surface ofthe conductive structure. In some embodiments, a planarization process,such as chemical mechanical polishing (CMP) is performed after thedeposition of the conductive material so that the top surface of theconductive structure is substantially planar. Next, the conductive layeris patterned and etched to form the conductive structure, whichcorresponds to the opening formed through the first passivation layer.The etch process includes a wet etching and a dry etch, such as aplasma-enhanced etch process. In some embodiments, the conductivestructure has a circular shape, an octagonal shape, a rectangular shapeor another suitable shape with respect to a top view.

Method 200 includes operation 220 in which a first dielectric film,e.g., first insulating film 142 in FIG. 1, is deposited over theconductive structure. In at least one embodiment, the first dielectricfilm is continuously and conformally deposited along the top surface offirst passivation layer, and sidewalls and the top surface of theconductive structure. In some embodiments, the deposition of the firstdielectric film includes CVD, such as plasma-enhanced CVD (PECVD), lowpressure CVD (LPCVD) or another suitable process. In some embodiments,the deposition of the first dielectric film includes an ALD or a highaspect ratio process (HARP).

Method 200 includes operation 230 in which a second dielectric film,e.g., second insulating film 144 in FIG. 1, is deposited over the firstdielectric film. In some embodiments, the second dielectric filmincludes undoped silicate glass (USG). The deposition of the seconddielectric film includes CVD, such as high density plasma CVD (HDPCVD),PECVD or another suitable process. In some embodiments where the seconddielectric film includes silicon oxide, a silicon-to-oxygen ratio of thesecond dielectric film is greater than that of the first dielectricfilm. Thus, during the deposition, a ratio of the usage of a siliconsource, such as silane, disilane, trisilane or dichlorosilane, to theusage of an oxygen source, such as oxygen or nitrous oxide, issufficient to result in a refractive index in a range from about 1.6 toabout 1.8. In some embodiments, the second dielectric film helps toprevent diffusion of silicon atoms toward the conductive structureduring a subsequent process. In some embodiments, the second dielectricfilm provides an etch selectivity or a selective endurance under an ionbombardment so as to realize a trapezoid profile of the semiconductordevice.

Method 200 includes operation 240 in which a third dielectric film,e.g., third insulating film 146 in FIG. 1, is deposited over the seconddielectric film. The deposition includes HDPCVD, PECVD or anothersuitable process. By using HDPCVD, the third dielectric film is denserthan the first dielectric film, reducing a stress spreading over thefirst passivation and fewer defects. In some embodiments, HDPCVD thatuses an electron cyclotron resonance (ECR) technique or an inducedcoupling plasma (ICP) technique provides the ion bombardment with aradio frequency (RF) bias that removes a portion of the seconddielectric film during the deposition of the third dielectric film. Insome embodiments where the third dielectric film includes silicon oxide,HDPCVD uses silane as a silicon precursor and oxygen as an oxygenprecursor. Inert gas such as argon is added in the process to enhance asputtering etch effect. In some embodiments, a portion of the seconddielectric film lying along sidewalls of the conductive structure isremoved during the deposition of the third dielectric film. As a result,a portion of the third dielectric film is in contact with the firstdielectric film. In at least one embodiment, the third dielectric filmis deposited using a same method as that used for the second dielectricfilm. However, even though the third dielectric film and the seconddielectric film are deposited in a same chamber and have a samematerial, an interface exists between the two films with respect to across-sectional view. By removing a portion of the second dielectricfilm, a combination of the second passivation layer lies along a shapeof the conductive structure, thereby reducing a risk of formingoverhangs that extend outwardly from an upper corner of the secondpassivation layer. A space between adjacent conductive pads has fewerpinholes than a semiconductor device manufactured by other approaches.

In some embodiments, additional operations are included in method 200,for example a fourth dielectric film is deposited over the thirddielectric film. As another example, the fourth dielectric film ispatterned and the second passivation layer is etched to form an openingto expose a center portion of the conductive structure so as to coupleto a redistribution line.

FIGS. 3A-3D are cross-sectional views of a semiconductor device 300 atvarious stages of manufacturing in accordance with one or moreembodiments. Semiconductor device 300 includes elements similar tosemiconductor device 100 and a last two digits of like elements are thesame. FIG. 3A is a cross-sectional view of semiconductor device 300following operation 210 in accordance with some embodiments.Semiconductor device 300 includes an IMD 310, a conductive line 312, afirst passivation layer 320, a plurality of contact pads 330 and a viaplug 332. In some embodiments, a conductive material is blanket formedover a top surface of first passivation layer 320. A lithography processand an etch process are subsequently performed to form contact pads 330.In some embodiments, contact pad 330 is formed using a dual damascenetechnique. In some embodiments, contact pad 330 has a thickness rangingfrom about 1000 nm to about 3000 nm. A greater thickness increases amanufacturing cost without a significant improvement in productionyield, in some instances. A smaller thickness increases a risk of beingdamaged during a wire bonding process, in some instances. In someembodiments, a spacing S30 between adjacent contact pads 130 is equal toor greater than 500 nm. A smaller spacing increases a difficulty of asubsequent filling process, in some instances. In some embodiments, aportion of first passivation layer 320 is exposed and the exposedportion is removed during the formation of contact pads 330. As aresult, the top surface of the exposed portion of first passivationlayer 320 is below a bottom surface of contact pad 330.

FIG. 3B is a cross-sectional view of semiconductor device 300 followingoperation 220 in accordance with some embodiments. A first insulatingfilm 342 is continuously and conformally along the top surface of firstpassivation layer, and sidewalls and the top surface of contact pad 330.In some embodiments, first insulating film 342 has a thickness rangingfrom about 50 nm to about 300 nm. A greater thickness increases apossibility of generating voids between adjacent contact pads 130, insome instances. A smaller thickness provides insufficient protection tocontact pads 130, in some instances. In some embodiments, a bottomportion of first insulating film 342, which is in direct contact withfirst passivation layer 320, is below the bottom surface of contact pad330.

FIG. 3C is a cross-sectional view of semiconductor device 300 followingoperation 230 in accordance with some embodiments. A second insulatingfilm 344 is continuously and conformally along first insulating film342. In some embodiments, second insulating film 344 has a uniformthickness ranging from about 20 nm to about 80 nm. A greater thicknessincreases a possibility of generating voids between adjacent contactpads 130, in some instances. A smaller thickness increases a risk ofatom diffusion during a subsequent process, in some instances. Inparticular, second insulating film 344 includes a first portion 344 aclose to and substantially parallel to first passivation layer 320, asecond portion 344 b over the top surface of contact pad 330 andsubstantially parallel to first portion 344 a, and a third portion 344 calong the sidewalls of contact pads 330. In some embodiments, anentirety of first portion 344 a is below the bottom surface of contactpad 330.

FIG. 3D is a cross-sectional view of semiconductor device 300 followingoperation 240 in accordance with some embodiments. A third insulatingfilm 346 is continuously over first insulating film 342. In someembodiments, third insulating film 346 has a thickness ranging fromabout 500 nm to about 1500 nm. A greater thickness increases apossibility of generating voids between adjacent contact pads 330, insome instances. An angle between a sidewall portion and a bottom portionof third insulating film 346 is greater than 95 degrees. In someembodiments, a spacing S32 between adjacent sidewall portions of thirdinsulating film 346 is equal to or greater than 250 nm. Because thirdportion 344 c is removed during the formation of third insulating film346, second insulating film 344 becomes discontinuous over firstinsulating film 342. As a result, a topmost portion and a bottommostportion of third insulating film 346 is in contact with secondinsulating film 344, and a sidewall portion of third insulating film 346is in direct contact with first insulating film 342. In someembodiments, the bottommost portion of third insulating film 346 isbelow the bottom surface of contact pad 330.

FIG. 4 is a cross-sectional view of a semiconductor device 400 inaccordance with one or more embodiments. Semiconductor device 400includes elements similar to semiconductor device 100 and a last twodigits of like elements are the same. In comparison with semiconductordevice 100 in FIG. 1, semiconductor device 400 further includes a fifthinsulating film 447 between a third insulating film 446 and a fourthinsulating film 448. In order to maintain a profile similar tosemiconductor device 100, a thickness of third insulating film 446 isreduced by about 100 nm in comparison with third insulating film 146 inFIG. 1. After the deposition of third insulating film 446, fifthinsulating film 447 is continuously and conformally deposited over thirdinsulating film 446. Fifth insulating film 447 has a curved shape withrespect to a cross-sectional view. In some embodiments, fifth insulatingfilm 447 is deposited using a same method as that used for secondinsulating film 444. In some embodiments, fifth insulating film 447 isdeposited using a different method from that used for second insulatingfilm 444. For example, in some embodiments, second insulating film 444is deposited using HDPCVD and fifth insulating film is deposited usingPECVD. In some embodiments, fifth insulating film has a thicknessranging from about 20 nm to about 80 nm. A greater thickness increases apossibility of generating voids between adjacent contact pads 430, insome instances. A smaller thickness increases a risk of atom diffusionduring a subsequent process, in some instances. Next, fourth insulatingfilm 448 is deposited over fifth insulating film 447. In someembodiments, fourth insulating film 448 is deposited using a same methodas that used for fifth insulating film 447. However, even though fourthinsulating film 448 and fifth insulating film 447 are deposited at asame chamber, an interface exists between the two films with respect toa cross-sectional view. In some embodiments, fourth insulating film 448is deposited using a different method from that used for fifthinsulating film 447. For example, fourth insulating film 448 isdeposited using PECVD and fifth insulating film is deposited usingHDPCVD. In at least one embodiment, in comparison with semiconductordevice 100 in FIG. 1, a thickness of fourth insulating film 448 isthinner than a thickness of fourth insulating film 148. As a result,because a top surface of third insulating film 446 is substantiallyplanar, fifth insulating film 447 is over third insulating film 446 in aplanar manner as well.

An aspect of this description relates to a semiconductor structure. Thesemiconductor structure includes a conductive structure over a firstpassivation layer. The semiconductor structure further includes a secondpassivation layer over the conductive structure and the firstpassivation layer. The second passivation layer has a first oxide filmextending along a top surface of the first passivation layer, sidewallsand a top surface of the conductive structure. The second passivationlayer further includes a second oxide film over a top surface of thefirst oxide film and a top surface of the conductive structure. Thesecond passivation layer further includes a third oxide film extendingalong a top surface of the second oxide film, the sidewalls and the topsurface of the conductive structure. In some embodiments, a sidewallportion of the first oxide film is in direct contact with a sidewallportion of the third oxide film. In some embodiments, a ratio of athickness of the second passivation layer over the first passivationlayer to a thickness of the conductive structure is in a range fromabout 0.5 to about 1. In some embodiments, a ratio of a spacing to athickness of the second passivation layer over the first passivationlayer is in a range from about 0.7 to about 1.3, wherein the spacing isbetween the conductive structure and an adjacent conductive structure.In some embodiments, the semiconductor structure further includes asilicon nitride film over the third oxide film, wherein an angle betweena sidewall portion and a bottom portion of the silicon nitride film isgreater than 95 degrees. In some embodiments, the second passivationlayer further includes a silicon nitride film over the third oxide film,wherein a bottom-up ratio of the silicon nitride film is in a range fromabout 0.75 to about 1.1. In some embodiments, the second oxide film andthe third oxide film have a Fourier transform infrared spectroscopy(FTIR) absorption band ranging from about 2500 nanometers (nm) to about2900 nm. In some embodiments, the second oxide film has a thickness fromabout 20 nm to about 100 nm.

An aspect of this description relates to a semiconductor structure. Thesemiconductor structure includes a conductive structure over a firstpassivation layer; and a second passivation layer over the conductivestructure and the first passivation layer. The second passivation layerhas a first oxide film extending along a top surface of the firstpassivation layer, sidewalls and a top surface of the conductivestructure, wherein a top surface of the first oxide film is planar. Thesecond passivation layer further includes a second oxide film over a topsurface of the first oxide film and a top surface of the conductivestructure, wherein a top surface of the second oxide film is planar. Thesecond passivation layer further includes a third oxide film extendingalong a top surface of the second oxide film, the sidewalls and the topsurface of the conductive structure, wherein a top surface of the thirdoxide film is curved. In some embodiments, the semiconductor structurefurther includes a second conductive structure over the firstpassivation layer, wherein the second conductive structure is spacedfrom the conductive structure in a direction parallel to a top surfaceof the first passivation layer. In some embodiments, the first oxidefilm is a continuous film extending over the second conductivestructure. In some embodiments, the second oxide film is a discontinuousfilm extending over the second conductive structure. In someembodiments, the third oxide film is a continuous film extending overthe second conductive structure. In some embodiments, the semiconductorstructure further includes a via extending through the first passivationlayer, wherein the conductive structure is electrically connected to thevia. In some embodiments, an entirety of a bottommost surface of theconductive structure contacts the first passivation layer. In someembodiments, the semiconductor structure further includes a guard sealring structure, wherein the conductive structure is over the guard sealring structure.

An aspect of this description relates to a method of fabricating asemiconductor structure. The method includes depositing a firstdielectric film continuously over a conductive structure. The methodfurther includes depositing a second dielectric film continuously overthe first dielectric film. The method further includes depositing athird dielectric film over the second dielectric film, whereindepositing the third dielectric film includes simultaneously removing aportion of the second dielectric film, and a portion of the thirddielectric film is in direct contact with a portion of the firstdielectric film. In some embodiments, the third dielectric film includesremoving the portion of the second dielectric film over a sidewall ofthe conductive structure. In some embodiments, depositing the thirddielectric film includes maintaining the second dielectric film over atop-most surface of the conductive structure. In some embodiments,depositing the third dielectric film includes depositing the thirddielectric film to form a curved top surface of the third dielectricfilm. In some embodiments, depositing the third dielectric film includesdepositing the third dielectric film having a bottommost surface below abottommost surface of the conductive structure. In some embodiments,depositing the third dielectric film includes depositing the thirddielectric film having a first thickness of a top-most surface of theconductive structure and having a second thickness along a sidewall ofthe conductive structure, wherein the first thickness is greater thanthe second thickness.

An aspect of this description relates to a semiconductor device. Thesemiconductor device includes a conductive structure over a firstpassivation layer. The semiconductor device further includes a firstinsulating film over the conductive structure, wherein the firstinsulating film has a first Si:X ratio, where X is another material inthe first insulating film, and the first insulating film is a continuouslayer. The semiconductor device further includes a second insulatingfilm over the first insulating film, wherein the second insulating filmhas a smaller Si:X ratio than the first insulating film, and the secondinsulating film is a discontinuous layer. The semiconductor devicefurther includes a third insulating film over the second insulatingfilm, wherein the third insulating film is between adjacent portions ofthe second insulating film. In some embodiments, X comprises oxygen. Insome embodiments, the third insulating film has a third Si:X ratiogreater than the Si:X ratio of the second insulating film. In someembodiments, the third Si:X ratio is equal to the first Si:X ratio. Insome embodiments, the adjacent portions of the second insulating filminclude a first portion over a top-most surface of the conductivestructure; and a second portion over a region of the first passivationlayer beyond a periphery of the conductive structure. In someembodiments, the adjacent portions of the second insulating film includea first portion entirely over a top-most surface of the conductivestructure; and a second portion entirely below a bottommost surface ofthe conductive structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: aconductive structure over a first passivation layer; and a secondpassivation layer over the conductive structure and the firstpassivation layer, wherein the second passivation layer has: a firstoxide film extending along a top surface of the first passivation layer,sidewalls and a top surface of the conductive structure, wherein a topsurface of the first oxide film is planar, a second oxide film over atop surface of the first oxide film and a top surface of the conductivestructure, wherein a top surface of the second oxide film is planar, anda third oxide film extending along a top surface of the second oxidefilm, the sidewalls and the top surface of the conductive structure,wherein a top surface of the third oxide film is curved.
 2. Thesemiconductor structure of claim 1, further comprising a secondconductive structure over the first passivation layer, wherein thesecond conductive structure is spaced from the conductive structure in adirection parallel to a top surface of the first passivation layer. 3.The semiconductor structure of claim 2, wherein the first oxide film isa continuous film extending over the second conductive structure.
 4. Thesemiconductor structure of claim 2, wherein the second oxide film is adiscontinuous film extending over the second conductive structure. 5.The semiconductor structure of claim 2, wherein the third oxide film isa continuous film extending over the second conductive structure.
 6. Thesemiconductor structure of claim 1, further comprising a via extendingthrough the first passivation layer, wherein the conductive structure iselectrically connected to the via.
 7. The semiconductor structure ofclaim 1, wherein an entirety of a bottommost surface of the conductivestructure contacts the first passivation layer.
 8. The semiconductorstructure of claim 1, further comprising a guard seal ring structure,wherein the conductive structure is over the guard seal ring structure.9. A method of fabricating a semiconductor structure, the methodcomprising: depositing a first dielectric film continuously over aconductive structure; depositing a second dielectric film continuouslyover the first dielectric film; and depositing a third dielectric filmover the second dielectric film, wherein depositing the third dielectricfilm comprises simultaneously removing a portion of the seconddielectric film, and a portion of the third dielectric film is in directcontact with a portion of the first dielectric film.
 10. The method ofclaim 9, wherein depositing the third dielectric film comprises removingthe portion of the second dielectric film over a sidewall of theconductive structure.
 11. The method of claim 9, wherein depositing thethird dielectric film comprises maintaining the second dielectric filmover a top-most surface of the conductive structure.
 12. The method ofclaim 9, wherein depositing the third dielectric film comprisesdepositing the third dielectric film to form a curved top surface of thethird dielectric film.
 13. The method of claim 9, wherein depositing thethird dielectric film comprises depositing the third dielectric filmhaving a bottommost surface below a bottommost surface of the conductivestructure.
 14. The method of claim 9, wherein depositing the thirddielectric film comprises depositing the third dielectric film having afirst thickness of a top-most surface of the conductive structure andhaving a second thickness along a sidewall of the conductive structure,wherein the first thickness is greater than the second thickness.
 15. Asemiconductor device comprising: a conductive structure over a firstpassivation layer; a first insulating film over the conductivestructure, wherein the first insulating film has a first Si:X ratio,where X is another material in the first insulating film, and the firstinsulating film is a continuous layer; a second insulating film over thefirst insulating film, wherein the second insulating film has a smallerSi:X ratio than the first insulating film, and the second insulatingfilm is a discontinuous layer; a third insulating film over the secondinsulating film, wherein the third insulating film is between adjacentportions of the second insulating film.
 16. The semiconductor device ofclaim 15, wherein X comprises oxygen.
 17. The semiconductor device ofclaim 15, wherein the third insulating film has a third Si:X ratiogreater than the Si:X ratio of the second insulating film.
 18. Thesemiconductor device of claim 17, wherein the third Si:X ratio is equalto the first Si:X ratio.
 19. The semiconductor device of claim 15,wherein the adjacent portions of the second insulating film comprise: afirst portion over a top-most surface of the conductive structure; and asecond portion over a region of the first passivation layer beyond aperiphery of the conductive structure.
 20. The semiconductor device ofclaim 15, wherein the adjacent portions of the second insulating filmcomprise: a first portion entirely over a top-most surface of theconductive structure; and a second portion entirely below a bottommostsurface of the conductive structure.